| 1. | Gets the user interface state of the element
获取元素的用户界面ui状态。 |
| 2. | Specifies the user interface state of a element within a
控件内某元素的用户界面( ui )状态。 |
| 3. | Influences of collision angle on the interface state of explosive compound materials
碰撞角对爆炸复合材料界面状态的影响 |
| 4. | Gets or sets a value indicating whether the band is in a selected user interface state
获取或设置一个值，该值指示带区是否为被选定。 （从 |
| 5. | It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery
假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。 |
| 6. | In the experiment of photo - excited c - v characteristics of sio2 / n - sic , a ledge that had been appeared in p - type sample was observed because of the deep interface states
然后使用光照条件讨论了p和n型sicmos的界面态的性质，即p型为施主态， n型为受主态。 |
| 7. | It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate
模拟结果表明：退火过程所加栅偏压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。 |
| 8. | The electrical parameters of buried oxide and interface state in soi structures influence the performance , reliability and the radiation hardness of devices fabricated in the superficial silicon film
完成了存储阵列，控制电路，外围电路的时序设计，原理图设计，版图设计，并且通过了drc ， lvs检查。 |
| 9. | A model of the sic pn junctions irradiated by neutron is presented . the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically
在辐照的电离效应方面，研究了辐照在sicmos氧化层中引入的陷阱电荷对mos沟道反型层迁移率的影响。 |
| 10. | In the high frequency c - v experiments , the large flat - band shift in sio2 / p - sic indicated that there was high density of deep interface states . the deep interface states were simply studied by using photo excitation
在无光照条件下，比较了n型和p型sicmos的不同特点，对其深耗尽特征和p型sicmos的平带电压作了讨论和解释。 |
